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Same model may have multiple batches, images only for reference.
FDB6690S Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDB6690S

Part No FDB6690S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 42A TO-263AB
Datasheet
FDB6690S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 42A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 15nC @ 5V
Max Input Capacitance 1238pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 15.5 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037980-FDB6690S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB6690S CAD Model

Description

The Fairchild/ON Semiconductor 1037980-FDB6690S is a medium popularity MOSFET electronic component used in discrete semiconductor products.

  • Maximum Power Dissipation: 48W (Tc)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: D2PAK (TO-263AB)
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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