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Same model may have multiple batches, images only for reference.
FDB8444TS Real Image
Same model may have multiple batches, images only for reference.

FDB8444TS

Part No FDB8444TS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 70A D2PAK-5
Datasheet
FDB8444TS Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 20A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 338nC @ 20V
Max Input Capacitance 8410pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 181W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 70A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263-5
Dimension TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
Win Source Part Number 1037987-FDB8444TS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDB8444TS CAD Model

Description

The Fairchild/ON Semiconductor 1037987-FDB8444TS is an N-channel MOSFET.

  • Package: TO-263-5
  • Power Dissipation: 181W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 20A (Ta), 70A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 338nC @ 20V
  • Maximum Rds On at Id, Vgs: 5 mOhm @ 70A, 10V
  • Part Status: Obsolete (EOL)
  • Popularity: Medium

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