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Same model may have multiple batches, images only for reference.
FDB86135 Real Image
Same model may have multiple batches, images only for reference.

FDB86135

Part No FDB86135
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V D2PAK
Datasheet
FDB86135 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 116nC @ 10V
Max Input Capacitance 7295pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta), 227W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037989-FDB86135
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDB86135 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance N-Channel power MOSFET designed for use in various electronic devices.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 75A @ 25°C
  • Maximum Power Dissipation: 2.4W (Ta), 227W (Tc)
  • Maximum Input Capacitance: 7295pF @ 25V
  • Package: D2PAK (TO-263AB)
  • Mounting Technology: SMD (SMT)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 3.5 mOhm @ 75A, 10V
  • Applications: power management and motor drive & control
  • Package Quantity: 800

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.5299 $55.2990
23+ $4.5374 $104.3602
35+ $4.3956 $153.8460
48+ $4.2538 $204.1824
61+ $4.1120 $250.8320
82+ $3.6866 $302.3012
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