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FDC6318P

Part No FDC6318P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 2.5A SSOT-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 2.5A
Maximum Rds On at Id,Vgs 90 mOhm @ 2.5A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 8nC @ 4.5V
Max Input Capacitance 455pF @ 6V
Maximum Power Dissipation 700mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-6
Win Source Part Number 1038022-FDC6318P
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDC6318P CAD Model

Description

The FDC6318P from Fairchild/ON Semiconductor is a 2 P-Channel (Dual) MOSFET featuring Logic Level Gate.

  • Application: Discrete Semiconductor Products
  • Mounting Type: SuperSOT-6
  • Power Dissipation: 700mW
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 2.5A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Gate Charge: 8nC @ 4.5V
  • Input Capacitance: 455pF @ 6V
  • Maximum Rds On @ Id,Vgs: 90 mOhm @ 2.5A, 4.5V
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
635+ $0.0790 $50.1650
1,545+ $0.0649 $100.2705
2,390+ $0.0628 $150.0920
3,290+ $0.0608 $200.0320
4,255+ $0.0588 $250.1940
5,695+ $0.0527 $300.1265
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,500 pieces
MOQ: 635 pcs
Order Increment : 1 pcs
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