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Same model may have multiple batches, images only for reference.
FDC699P
Same model may have multiple batches, images only for reference.

FDC699P

Part No FDC699P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 7A SSOT-6
Datasheet
FDC699P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 38nC @ 5V
Max Input Capacitance 2640pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-6 FLMP
Dimension 6-SSOT Flat-lead, SuperSOT-6 FLMP
Win Source Part Number 119519-FDC699P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDC699P CAD Model

Description

FDC699P - High Current P-Channel MOSFET

The FDC699P is designed to handle higher current loads with ease, delivering exceptional performance in demanding applications. Its construction ensures durability and efficiency, making it a popular choice in advanced electronics.

  • Applications:
    • High-power inverters
    • Efficient power conversion systems
    • Load regulation
  • Features and Benefits:
    • Handles higher currents with high efficiency
    • Minimized conduction losses
    • Rugged package providing mechanical stability
  • Additional Details:
    • Maximum Drain-Source Voltage: -30V
    • Continuous Drain Current: -4.2A
    • Package: SuperSOT-6

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