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FDD14AN06LA0_F085

Part No FDD14AN06LA0_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 9.5A DPAK-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 9.5A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 32nC @ 5V
Max Input Capacitance 2810pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 11.6 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 110489-FDD14AN06LA0_F085
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD14AN06LA0_F085 CAD Model

Description

Product Description

The FDD14AN06LA0_F085 is a robust N-channel MOSFET known for its efficiency and reliability in various applications. This component is designed to handle high-speed switching, making it ideal for optimizing circuit performance.

Features and Benefits

  • Low On-Resistance (R<sub>DS(on)) for reduced power loss
  • High-speed switching capability
  • Rugged construction suitable for harsh environments
  • Enhanced thermal performance

Applications

  • Automotive systems
  • Power supply units
  • Battery management systems
  • DC-DC converters

With its excellent thermal characteristics and durability, the FDD14AN06LA0_F085 is the perfect choice for projects requiring efficient power management and reliability.

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