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Same model may have multiple batches, images only for reference.
HUF75307T3ST Real Image
Same model may have multiple batches, images only for reference.

HUF75307T3ST

Part No HUF75307T3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 2.6A SOT-223
Datasheet
HUF75307T3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 17nC @ 20V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 2.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 204916-HUF75307T3ST
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUF75307T3ST CAD Model

Description

The Fairchild/ON Semiconductor HUF75307T3ST is an N-channel MOSFET transistor with a power dissipation (Max) of 1.1W (Ta). It is packaged in a SOT-223-4 and has an operating temperature range of -55°C to 150°C (TJ).

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 2.6A (Ta) at 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 17nC @ 20V
  • Maximum Rds On: 90 mOhm @ 2.6A, 10V

The supply and demand status is balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5778 $52.0020
215+ $0.4741 $101.9315
330+ $0.4593 $151.5690
450+ $0.4445 $200.0250
585+ $0.4297 $251.3745
780+ $0.3852 $300.4560
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