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TPC8221-H,LQ(S

Part No TPC8221-H,LQ(S
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6A 8SOP
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 25 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 2.3V @ 100μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 830pF @ 10V
Maximum Power Dissipation 450mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1111107-TPC8221-H,LQ(S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC8221-H,LQ(S CAD Model

Description

The TPC8221-H,LQ(S) is an obsolete(EOL) 2 N-Channel (Dual) FET type with a standard feature. Manufactured by Toshiba Semiconductor and Storage

  • Status: Obsolete(EOL)
  • FET Type: 2 N-Channel (Dual)
  • Feature: Standard
  • Case/Package: 8-SOP
  • Maximum Power Dissipation: 450mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 6A
  • Gate-Source Threshold Voltage: 2.3V @ 100μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Input Capacitance: 830pF @ 10V
  • Maximum Rds On @ Id,Vgs: 25 mOhm @ 3A, 10V
  • Supply and Demand Status: Sufficient

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