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Same model may have multiple batches, images only for reference.
FDD1600N10ALZD Real Image
Same model may have multiple batches, images only for reference.

FDD1600N10ALZD

Part No FDD1600N10ALZD
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 6.8A TO252-5L
Datasheet
FDD1600N10ALZD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 3.61nC @ 10V
Max Input Capacitance 225pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 14.9W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-5, DPak (4 Leads + Tab), TO-252AD
Win Source Part Number 1038048-FDD1600N10ALZD
Popularity Medium
Supply and Demand Status Limited
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDD1600N10ALZD CAD Model

Description

The Fairchild/ON Semiconductor 426414 is an N-channel MOSFET with a drain-source breakdown voltage of 100V.

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On at Id,Vgs: 160 mOhm @ 3.4A, 10V
  • Continuous Forward Current-Max: 6.8A
  • Mounting Type: SMD (SMT)
  • Package: TO-252 (D-Pak)
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Limited
  • Package Quantity: 2,500

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Quantity Unit Price Ext. Price
40+ $1.5451 $61.8040
95+ $1.2677 $120.4315
145+ $1.2282 $178.0890
195+ $1.1885 $231.7575
255+ $1.1489 $292.9695
340+ $1.0300 $350.2000
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