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Same model may have multiple batches, images only for reference.
FDD3672_F085 Real Image
Same model may have multiple batches, images only for reference.

FDD3672_F085

Part No FDD3672_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 44A DPAK-3
Datasheet
FDD3672_F085 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1635pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 47 mOhm @ 21A, 6V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 104240-FDD3672_F085
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD3672_F085 CAD Model

Description

FDD3672_F085 - High-Temperature N-Channel MOSFET

Specially designed for high-temperature performance, the FDD3672_F085 MOSFET is ideal for applications requiring durability under extreme conditions. Its enhanced thermal performance ensures reliability.

  • Applications:
    • High-temperature industrial applications
    • Automotive power systems
    • Aerospace electronics
  • Features and Benefits:
    • Extended Temperature Range
    • High On-state Current Capability
    • Excellent Heat Dissipation
  • Additional Details:
    • Maximum Drain Current: 72A
    • Drain-Source Voltage: 100V
    • Package Type: TO-252

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