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Same model may have multiple batches, images only for reference.
FDD3680 Real Image
Same model may have multiple batches, images only for reference.

FDD3680

Part No FDD3680
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 25A D-PAK
Datasheet
FDD3680 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 1735pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Ta)
Maximum Rds On at Id,Vgs 46 mOhm @ 6.1A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038062-FDD3680
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDD3680 CAD Model

Description

The Fairchild/ON Semiconductor FDD3680 is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 25A @ 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 25A
  • Gate-Source Voltage: ±20V
  • Maximum Rds On @ 6.1A and 10V: 46 mOhm
  • Gate-Source Threshold Voltage @ 250μA: 4V
  • Max Gate Charge @ 10V: 53nC
  • Maximum Input Capacitance @ 50V: 1735pF

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2529 $58.1670
560+ $0.2079 $116.4240
865+ $0.2010 $173.8650
1,195+ $0.1940 $231.8300
1,535+ $0.1883 $289.0405
2,055+ $0.1686 $346.4730
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,445 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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