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FDD6637

Part No FDD6637
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 35V 13A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 35V
Continuous Drain Current at 25°C 13A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 2370pF @ 20V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.1W (Ta), 57W (Tc)
Maximum Rds On at Id,Vgs 11.6 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-PAK (TO-252AA)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038088-FDD6637
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDD6637 CAD Model

Description

The Fairchild/ON Semiconductor FDD6637 is a P-channel MOSFET with a drain-source breakdown voltage of 35V and a continuous drain current of 13A (Ta) and 55A (Tc) at 25 degrees Celsius.

  • Drain-Source Breakdown Voltage: 35V
  • Continuous Drain Current: 13A (Ta) and 55A (Tc) @ 25 degrees Celsius
  • Maximum Power Dissipation: 3.1W (Ta) and 57W (Tc)
  • Mounting: SMD (SMT)
  • Packaging: D-PAK (TO-252AA)
  • Maximum Rds On: 11.6 mOhm @ 14A and 10V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 63nC @ 10V
  • Supply and Demand Status: Limited
  • Pieces per Package: 2,500

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8551 $51.3060
145+ $0.7017 $101.7465
225+ $0.6797 $152.9325
305+ $0.6578 $200.6290
395+ $0.6359 $251.1805
530+ $0.5701 $302.1530
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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