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FDD6672A

Part No FDD6672A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 65A D-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 65A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 46nC @ 4.5V
Max Input Capacitance 5070pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.2W (Ta), 70W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 066933-FDD6672A
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD6672A CAD Model

Description

FDD6672A MOSFET

This N-channel MOSFET, FDD6672A, is engineered for top performance in industrial power management systems. Its design focuses on low gate charge and improved switching dynamics, ensuring it excels in demanding electrical environments.

  • Solar Power Systems
  • Electric Vehicle Charging Stations
  • Industrial Automation
  • Energy-efficient Appliances

Features and Benefits

  • Voltage and current scaling capabilities for dynamic power systems
  • Exceptional avalanche energy rating
  • Highly efficient thermal conduction properties

The FDD6672A MOSFET is a testament to modern power management solutions, delivering a great mix of speed, efficiency, and power.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,500 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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