The Fairchild/ON Semiconductor FDD6780 is an N-channel MOSFET designed for use in discrete semiconductor products.

• Channel Type: N-Channel
• Power Dissipation (Max): 3.7W (Ta), 32.6W (Tc)
• Operating Temperature: -55°C to 175°C (TJ)
• Drain-Source Breakdown Voltage: 25V
• Continuous Drain Current: 16.5A (Ta), 30A (Tc)
• Gate-Source Threshold Voltage: 3V @ 250μA
• Gate Charge (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Max) @ Vds: 1590pF @ 13V
• Package: D-PAK (TO-252AA)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63