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Same model may have multiple batches, images only for reference.
FDD6N50TM_F085 Real Image
Same model may have multiple batches, images only for reference.

FDD6N50TM_F085

Part No FDD6N50TM_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 6A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 16.6nC @ 10V
Max Input Capacitance 9400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1038105-FDD6N50TM_F085
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian FDD6N50TM_F085 CAD Model

Description

The FDD6N50TM_F085 is an active electronic component manufactured by Fairchild/ON Semiconductor.

  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 6A (Tc) @ 25°C
  • Power Dissipation (max): 89W (Tc)
  • Drive Voltage: 10V (max Rds On, Min Rds On)
  • Packaging: Reel - TR
  • Mounting Style: SMD (SMT)
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: D-Pak
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Max Gate Charge: 16.6nC @ 10V
  • Max Input Capacitance: 9400pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 900 mOhm @ 3A, 10V
  • Used In: Industrial applications
  • Win Source Part Number: 1038105

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