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Same model may have multiple batches, images only for reference.
FDD6N50TM_WS Real Image
Same model may have multiple batches, images only for reference.

FDD6N50TM_WS

Part No FDD6N50TM_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 6A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 16.6nC @ 10V
Max Input Capacitance 9400pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 121154-FDD6N50TM_WS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDD6N50TM_WS CAD Model

Description

FDD6N50TM_WS Water-Resistant N-Channel MOSFET Transistor

The FDD6N50TM_WS is a water-resistant variant of the widely used FDD6N50TM. It is engineered for environments where moisture resistance and reliability are crucial, without compromising on performance.

Key Features

  • Water-Resistant Design: Suitable for applications exposed to moisture.
  • High Power Capacity: Supports substantial loads with high efficiency.
  • Robust Circuit Integration: Compatible with various electrical frameworks.

Applications

  • Outdoor Electronic Systems
  • Marine Applications
  • Water Treatment Systems
  • Weatherproof Devices

This water-resistant MOSFET is ideal for designers working on projects where moisture and environmental factors are a concern, ensuring reliability and performance in challenging conditions.

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