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FDD8426H Real Image1 FDD8426H Real Image2
Same model may have multiple batches, images only for reference.
FDD8426H Real Image1 FDD8426H Real Image2
FDD8426H Real Image1 FDD8426H Real Image2
Same model may have multiple batches, images only for reference.

FDD8426H

Part No FDD8426H
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 40V 12A/10A DPAK
Datasheet
FDD8426H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 12A, 10A
Maximum Rds On at Id,Vgs 12 mOhm @ 12A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 53nC @ 10V
Max Input Capacitance 2735pF @ 20V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-4L
Win Source Part Number 1038111-FDD8426H
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian FDD8426H CAD Model

Description

The Fairchild/ON Semiconductor N and P-Channel FET is a discrete semiconductor product with a logic level gate feature.

  • Maximum Power Dissipation: 1.3W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 12A, 10A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Rds On @ Id,Vgs: 12 mOhm @ 12A, 10V
  • Supply and Demand Status: Balanced
  • Applications: Power Management and Industrial

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