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FDD8782

Part No FDD8782
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 35A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1220pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 015962-FDD8782
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDD8782 CAD Model

Description

FDD8782 - N-Channel MOSFET

The FDD8782 is engineered for seamless integration into power circuits requiring high-speed switching capabilities and minimal gate charge.

  • Applications:
    • Server Power Supplies
    • Solar Inverters
    • Industrial Equipment
    • Telecommunication Infrastructure
  • Features and Benefits:
    • High Efficiency: Reduces overall power consumption.
    • Low Gate Charge: Minimizes drive loss and improves switching performance.
    • Durable Construction: For operational stability under various conditions.
  • Additional Details: The FDD8782’s low on-resistance makes it a versatile solution for a wide range of power applications, providing reliable performance and robustness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4545 $51.5445
50+ $2.0140 $100.7000
77+ $1.9511 $150.2347
106+ $1.8881 $200.1386
137+ $1.8252 $250.0524
184+ $1.6364 $301.0976
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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