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Same model may have multiple batches, images only for reference.
FDI025N06
Same model may have multiple batches, images only for reference.

FDI025N06

Part No FDI025N06
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 265A TO-262
Datasheet
FDI025N06 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 265A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 226nC @ 10V
Max Input Capacitance 14885pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 395W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 066963-FDI025N06
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDI025N06 CAD Model

Description

The FDI025N06 is a N-Channel MOSFET from Fairchild/ON Semiconductor. This discrete semiconductor product is designed for use in through-hole mounting.

  • Channel Type: N-Channel
  • Power Dissipation: 395W (Tc)
  • Temperature Range: -55°C to 175°C
  • Gate-Source Voltage (Max): ±20V
  • Mounting Type: Through-hole
  • Supply and Demand: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $93.7710 $93.7710
2+ $76.9403 $153.8806
3+ $74.5356 $223.6068
4+ $72.1321 $288.5284
5+ $69.7274 $348.6370
6+ $62.5144 $375.0864
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,400 pieces
Order Increment : 1 pcs
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