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FDMC5614P Real Image FDMC5614P Real Image
Same model may have multiple batches, images only for reference.
FDMC5614P Real Image FDMC5614P Real Image
FDMC5614P Real Image FDMC5614P Real Image
Same model may have multiple batches, images only for reference.

FDMC5614P

Part No FDMC5614P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 5.7A POWER33
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 5.7A (Ta), 13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1055pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 5.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-MLP (3.3x3.3), Power33
Dimension 8-PowerWDFN
Win Source Part Number 140551-FDMC5614P
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMC5614P CAD Model

Description

The FDMC5614P MOSFET is a P-channel, surface mount device manufactured by Fairchild/ON Semiconductor.

  • Drain-Source Breakdown Voltage: 60V
  • Maximum Continuous Drain Current: 5.7A @ 25°C, 13.5A @ Tc
  • Power Dissipation: 2.1W @ Ta, 42W @ Tc
  • Package: 8-MLP (3.3x3.3), Power33
  • Maximum Rds On: 100 mOhm @ 5.7A, 10V
  • Drive Voltage: 4.5V, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Popularity: Medium
  • Quantity per Package: 3k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8489 $50.9340
130+ $0.7952 $103.3760
200+ $0.7684 $153.6800
280+ $0.7146 $200.0880
365+ $0.6878 $251.0470
455+ $0.6609 $300.7095
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Availability: 18,000 pieces
MOQ: 60 pcs
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