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FDMC86261P

Name: FDMC86261P
Brand: Fairchild/ON Semiconductor
SKU: 453257
Availability: InStock
Rating: 4.84 (48 reviews)

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Part No	FDMC86261P
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 150V 2.7A 8MLP
Datasheet	FDMC86261P Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Reel - TR
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	150V
Continuous Drain Current at 25°C	2.7A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	24nC @ 10V
Max Input Capacitance	1360pF @ 75V
Maximum Gate-Source Voltage	±25V
Power Dissipation (Max)	2.3W (Ta), 40W (Tc)
Maximum Rds On at Id,Vgs	160 mOhm @ 2.4A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-MLP (3.3x3.3), Power33
Dimension	8-PowerWDFN
Win Source Part Number	1038208-FDMC86261P
Popularity	Medium
Supply and Demand Status	Limited
Quantity per package	3k pcs
Ultra Librarian 3D Model	Ultra Librarian FDMC86261P CAD Model

Description

The Fairchild/ON Semiconductor FDMC86261P is a P-channel MOSFET with a power dissipation of 2.3W (Ta) and 40W (Tc).

Drain-Source Breakdown Voltage: 150V
Continuous Drain Current: 2.7A (Ta) and 9A (Tc) @ 25°C
Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Rds On @ Id,Vgs: 160 mOhm @ 2.4A, 10V
Maximum Gate-Source Voltage: ±25V
Maximum Gate Charge: 24nC @ 10V

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
45+	$1.2853	$57.8385
110+	$1.0547	$116.0170
170+	$1.0217	$173.6890
235+	$0.9887	$232.3445
305+	$0.9558	$291.5190
405+	$0.8569	$347.0445

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 121,000 pieces

MOQ: 45 pcs

Order Increment : 1 pcs

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