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Same model may have multiple batches, images only for reference.
FDMS0306AS Real Image
Same model may have multiple batches, images only for reference.

FDMS0306AS

Part No FDMS0306AS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 26A PT8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 26A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 57nC @ 10V
Max Input Capacitance 3550pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 59W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (5x6), Power56
Dimension 8-PowerTDFN
Win Source Part Number 016053-FDMS0306AS
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS0306AS CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a powerful N-channel component suitable for use in a wide range of electronic applications.

  • Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 26A (Ta), 49A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Maximum Gate Charge: 57nC @ 10V
  • Maximum Rds On: 2.4 mOhm @ 26A, 10V
  • Package: 8-PQFN (5x6), Power56

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