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FDMS3622S

Part No FDMS3622S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 17.5A/34A PWR56
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 17.5A, 34A
Maximum Rds On at Id,Vgs 5 mOhm @ 17.5A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1570pF @ 13V
Maximum Power Dissipation 1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Power56
Win Source Part Number 1038236-FDMS3622S
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDMS3622S CAD Model

Description

The FDMS3622S is a PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor). This device is an N-Channel MOSFET designed for synchronous rectification in isolated DC-DC converters and power management in portable devices. It features a low on-resistance (RDS(on)) and is optimized for fast switching speeds, making it a suitable choice for high-efficiency power conversion applications.

Applications:

  • Synchronous rectification in isolated DC-DC converters
  • Power management in portable devices (e.g., laptops, smartphones)
  • High-frequency switching power supplies
  • Battery chargers
  • Load switching

Features:

  • Low On-Resistance (RDS(on)): Reduces conduction losses, improving efficiency.
  • Fast Switching Speed: Minimizes switching losses.
  • Low Gate Charge (Qg): Reduces switching losses and improves overall efficiency.
  • Avalanche Rated: Provides robust performance under transient conditions.
  • PowerTrench® Technology: Enhances performance and efficiency.

Benefits:

  • High Efficiency: Low on-resistance and fast switching speed minimize power losses, resulting in improved energy efficiency.
  • Compact Design: Allows for integration into space-constrained applications.
  • Robust Performance: Avalanche rating enhances reliability and withstands transient conditions.
  • Reduced Heat Dissipation: Low RDS(on) minimizes heat generation, improving system reliability.
  • Extended Battery Life: Improved efficiency translates to longer battery life in portable devices.

Additional Details:

The FDMS3622S is characterized by a drain-source voltage (VDS) of 30V and a continuous drain current (ID) rating that varies depending on the specific package and operating conditions. Its low RDS(on) is specified at both VGS = 10V and VGS = 4.5V, making it suitable for a range of gate drive voltages. It's available in a thermally enhanced package to facilitate efficient heat dissipation. The device is typically used in high-frequency, high-efficiency power conversion systems.

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