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Same model may have multiple batches, images only for reference.
FDP100N10 Real Image
Same model may have multiple batches, images only for reference.

FDP100N10

Part No FDP100N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 7300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 040264-FDP100N10
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP100N10 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a N-Channel polarity electronic component.

  • Maximum Power Dissipation: 208W (Tc)
  • Drive Voltage: 10V (Max Rds On, Min Rds On)
  • Drain-Source Breakdown Voltage: 100V
  • Case: TO-220-3
  • Operating Temperature: -55°C to 175°C (TJ)
  • Continuous Drain Current: 75A (Tc) at 25°C
  • Gate-Source Threshold Voltage: 4.5V at 250μA
  • Maximum Gate Charge: 100nC at 10V
  • Maximum Input Capacitance: 7300pF at 25V

The MOSFET is popular and has a limited supply and demand status. Each package contains 800 units.

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Quantity Unit Price Ext. Price
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62+ $1.8757 $116.2934
96+ $1.8180 $174.5280
132+ $1.7591 $232.2012
170+ $1.7002 $289.0340
228+ $1.5246 $347.6088
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Availability: 5,130 pieces
MOQ: 26 pcs
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