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Same model may have multiple batches, images only for reference.
FDP150N10 Real Image
Same model may have multiple batches, images only for reference.

FDP150N10

Part No FDP150N10
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 57A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 69nC @ 10V
Max Input Capacitance 4760pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 49A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 016117-FDP150N10
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP150N10 CAD Model

Description

The FDP150N10 is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Power Dissipation: 110W @ Tc
  • Continuous Drain Current: 57A @ 25°C
  • Drain-Source Breakdown Voltage: 100V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 69nC @ 10V
  • Maximum Input Capacitance: 4760pF @ 25V
  • Package: TO-220-3
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9909 $59.7270
75+ $1.6336 $122.5200
110+ $1.5826 $174.0860
155+ $1.5315 $237.3825
200+ $1.4805 $296.1000
265+ $1.3273 $351.7345
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Availability: 3,621 pieces
MOQ: 30 pcs
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