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FDP2552

Part No FDP2552
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 37A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 5A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 51nC @ 10V
Max Input Capacitance 2800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 204116-FDP2552
Popularity Medium
Supply and Demand Status Limited
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian FDP2552 CAD Model

Description

The FDP2552 is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor. It has a drain-source breakdown voltage of 150V and can handle a continuous drain current of 5A at Ta, 37A at Tc. The maximum power dissipation is 150W (Tc). It comes in a TO-220-3 package and is mounted using through-hole technology.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 5A (Ta), 37A (Tc)
  • Maximum Power Dissipation: 150W (Tc)
  • Mounting Style: Through-Hole
  • Package: TO-220-3
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 51nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5499 $61.9960
95+ $1.2718 $120.8210
145+ $1.2321 $178.6545
195+ $1.1923 $232.4985
255+ $1.1526 $293.9130
340+ $1.0334 $351.3560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,400 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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