The FDP33N25 is an N-channel MOSFET transistor from Fairchild/ON Semiconductor. It is designed for use in discrete semiconductor products and has a maximum power dissipation of 235W (Tc). The FDP33N25 is available in a TO-220-3 package and has a temperature range of -55°C to 150°C (TJ). It is compliant with halogen-free standards.

• Polarity: N-Channel
• Maximum Power Dissipation: 235W (Tc)
• Package: TO-220-3
• Temperature Range: -55°C to 150°C (TJ)
• Drain-Source Breakdown Voltage: 250V
• Continuous Drain Current: 33A (Tc) @ 25°C
• Gate-Source Threshold Voltage: 5V @ 250μA
• Maximum Gate Charge: 48nC @ 10V
• Maximum Rds On: 94 mOhm @ 16.5A, 10V