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Same model may have multiple batches, images only for reference.
FDP7N50 Real Image
Same model may have multiple batches, images only for reference.

FDP7N50

Part No FDP7N50
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 7A TO-220
Datasheet
FDP7N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 16.6nC @ 10V
Max Input Capacitance 940pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 067033-FDP7N50
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDP7N50 CAD Model

Description

The FDP7N50 is an N-Channel MOSFET with:

  • Power Dissipation (Max): 89W @ 25°C (case temperature)
  • Mounting Type: Through Hole
  • Package: TO-220-3
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 7A @ 25°C
  • Gate-Source Voltage (Max): ±30V
  • Rds On (Max): 900 mOhm @ 3.5A, 10V

The MOSFET is widely used in various electronic circuits and devices due to its high popularity and limited supply and demand status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7909 $59.3175
180+ $0.6490 $116.8200
280+ $0.6287 $176.0360
380+ $0.6084 $231.1920
495+ $0.5881 $291.1095
660+ $0.5273 $348.0180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,300 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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