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FDP8870

Part No FDP8870
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 156A TO-220
Sample
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 19A (Ta), 156A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 132nC @ 10V
Max Input Capacitance 5200pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 4.1 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 016120-FDP8870
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian FDP8870 CAD Model

Description

The Fairchild/ON Semiconductor FDP8870 is a high-performance N-channel MOSFET designed for power management and industrial applications.

  • Maximum Power Dissipation: 160W (Tc)
  • Continuous Drain Current: 19A (Ta), 156A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Rds On at Id,Vgs: 4.1 mOhm @ 35A, 10V
  • Package: TO-220AB
  • Mounting: Through Hole
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 5200pF @ 15V
  • Quantity per Package: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0322 $51.6100
120+ $0.8470 $101.6400
185+ $0.8205 $151.7925
255+ $0.7940 $202.4700
330+ $0.7676 $253.3080
440+ $0.6882 $302.8080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 900 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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