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Same model may have multiple batches, images only for reference.
FDP8870_F085 Real Image
Same model may have multiple batches, images only for reference.

FDP8870_F085

Part No FDP8870_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 156A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 19A (Ta), 156A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 132nC @ 10V
Max Input Capacitance 5200pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 4.1 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1038340-FDP8870_F085
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDP8870_F085 CAD Model

Description

The Fairchild/ON Semiconductor 1038340-FDP8870_F085 is an active N-channel MOSFET with a maximum power dissipation of 160W (Tc) and a drain-source breakdown voltage of 30V.

  • Package: TO-220AB
  • Dimension: TO-220-3
  • Mounting: through-hole
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 4.1 mOhm @ 35A, 10V
  • Maximum Gate Charge: 132nC @ 10V
  • Maximum Input Capacitance: 5200pF @ 15V

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26+ $4.4733 $116.3058
40+ $4.3336 $173.3440
56+ $4.1938 $234.8528
72+ $4.0541 $291.8952
96+ $3.6348 $348.9408
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Availability: 48,200 pieces
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