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FDPC8011S

Part No FDPC8011S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 13A/27A 8PQFN
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 13A, 27A
Maximum Rds On at Id,Vgs 6 mOhm @ 13A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 1240pF @ 13V
Maximum Power Dissipation 800mW, 900mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PQFN (3.3x3.3), Power33
Win Source Part Number 125780-FDPC8011S
Popularity Medium
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian FDPC8011S CAD Model

Description

The Fairchild/ON Semiconductor FDPC8011S is a dual N-Channel asymmetrical FET transistor designed for high power applications.

  • Maximum Power Dissipation: 800mW and 900mW
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 13A and 27A @ 25°C
  • Maximum Rds On at Id,Vgs: 6 mOhm @ 13A, 10V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 19nC @ 10V
  • Package: 8-PQFN (3.3x3.3), Power33
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3739 $52.4868
28+ $3.5888 $100.4864
44+ $3.4767 $152.9748
60+ $3.3645 $201.8700
77+ $3.2524 $250.4348
103+ $2.9159 $300.3377
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,560 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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