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Same model may have multiple batches, images only for reference.
FDPF39N20 Real Image
Same model may have multiple batches, images only for reference.

FDPF39N20

Part No FDPF39N20
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 39A TO-220F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 49nC @ 10V
Max Input Capacitance 2130pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 66 mOhm @ 19.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 067054-FDPF39N20
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FDPF39N20 CAD Model

Description

The Fairchild/ON Semiconductor FDPF39N20 is a N-Channel MOSFET.

  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 39A (Tc) @ 25°C
  • Maximum Rds On: 66 mOhm @ 19.5A, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 49nC @ 10V
  • Maximum Input Capacitance: 2130pF @ 25V
  • Power Dissipation: 37W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: TO-220F
  • Mounting: Through-hole
  • Quantity per Package: 1k pcs

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