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Same model may have multiple batches, images only for reference.
FDR8308P
Same model may have multiple batches, images only for reference.

FDR8308P

Part No FDR8308P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 3.2A SSOT-8
Datasheet
FDR8308P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.2A
Maximum Rds On at Id,Vgs 50 mOhm @ 3.2A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 19nC @ 4.5V
Max Input Capacitance 1240pF @ 10V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-8
Win Source Part Number 117457-FDR8308P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDR8308P CAD Model

Description

The Fairchild/ON Semiconductor 117457-FDR8308P is a 2 P-Channel (Dual) MOSFET.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.2A
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Rds On (Id,Vgs): 50 mOhm @ 3.2A, 4.5V
  • Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 800mW
  • Package: SMD (SMT) SuperSOT-8
  • Operating Temperature: -55°C to 150°C (TJ)
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5885 $58.8500
240+ $0.4829 $115.8960
375+ $0.4678 $175.4250
515+ $0.4528 $233.1920
660+ $0.4377 $288.8820
885+ $0.3924 $347.2740
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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