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FDS4435BZ

Part No FDS4435BZ
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 8.8A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1845pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 20 mOhm @ 8.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016137-FDS4435BZ
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Consumer Electronics
Family Name FDS4435BZ
Introduction Date July 19, 2005
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS4435BZ CAD Model

Description

The FDS4435BZ is a high popularity P-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Power Dissipation: 2.5W (Ta)
  • Common Applications: Power management and consumer electronics
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3191 $51.0560
385+ $0.2619 $100.8315
595+ $0.2537 $150.9515
815+ $0.2455 $200.0825
1,055+ $0.2373 $250.3515
1,410+ $0.2128 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 119,978 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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