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Same model may have multiple batches, images only for reference.
FDS6672A Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDS6672A

Part No FDS6672A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12.5A 8SOIC
Datasheet
FDS6672A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 46nC @ 4.5V
Max Input Capacitance 5070pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 8 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 067084-FDS6672A
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian FDS6672A CAD Model

Description

The FDS6672A is a N-Channel MOSFET from Fairchild/ON Semiconductor used in power management and industrial applications.

  • Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 12.5A (Ta) @ 25°C
  • Rds On (Maximum): 8 mOhm @ 14A, 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Gate Charge (Maximum): 46nC @ 4.5V
  • Input Capacitance (Maximum): 5070pF @ 15V
  • Gate-Source Voltage (Maximum): ±12V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Operating Temperature: -55°C to 150°C (TJ)

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140+ $0.7196 $100.7440
220+ $0.6972 $153.3840
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385+ $0.6522 $251.0970
515+ $0.5847 $301.1205
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