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Same model may have multiple batches, images only for reference.
FDS6675A Real Image
Same model may have multiple batches, images only for reference.

FDS6675A

Part No FDS6675A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 11A 8SOIC
Datasheet
FDS6675A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 34nC @ 5V
Max Input Capacitance 2330pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 13 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 067087-FDS6675A
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian FDS6675A CAD Model

Description

The FDS6675A is a P-Channel MOSFET from Fairchild/ON Semiconductor. It is obsolete (EOL) and has a medium popularity.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (Maximum): 11A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge (Maximum): 34nC @ 5V
  • Rds On (Maximum): 13 mOhm @ 11A, 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting Type: SMD (SMT)
  • Applications: Industrial and Power Management
  • Input Capacitance (Maximum): 2330pF @ 15V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Supply and Demand Status: Balanced

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