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FDS6688_NL

Part No FDS6688_NL
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 008, Plastic Molded, SOIC-8 Pkg, Narrow Body, SMD (S1)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

RoHS Non-Compliant
Win Source Part Number 1058915-FDS6688_NL
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Fairchild/ON Semiconductor
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FDS6688_NL CAD Model

Description

The FDS6688_NL is an N-Channel PowerTrench® MOSFET from Fairchild Semiconductor (now ON Semiconductor). It's designed for high-efficiency switching applications. This MOSFET leverages Fairchild's advanced PowerTrench® technology to minimize conduction losses and switching losses, resulting in improved overall system efficiency.

Applications:

  • DC-DC converters in computing and telecommunications equipment
  • Load switching applications
  • Power management in portable devices
  • Synchronous rectification in power supplies

Features:

  • Low on-resistance (RDS(on)) minimizes conduction losses
  • Fast switching speed reduces switching losses
  • Low gate charge (Qg) for efficient driver operation
  • Avalanche energy rated
  • 100% Rg tested
  • RoHS Compliant

Benefits:

  • Improved energy efficiency, leading to reduced power consumption and heat generation
  • Higher power density due to efficient thermal performance
  • Extended battery life in portable applications
  • Simplified thermal management due to lower operating temperatures
  • Enhanced system reliability due to robust design

Technical Specifications:

The FDS6688_NL typically features a drain-source voltage (VDS) rating of 30V. The continuous drain current (ID) rating is dependent on the specific application and thermal management but can typically reach around 13A with proper heat sinking. The RDS(on) is typically in the range of 6.8 mΩ at VGS = 10V. It is offered in a SO-8 package for surface mount assembly. The power dissipation is dependent on the mounting and cooling conditions. Gate Threshold Voltage is typically between 1V and 3V.

The PowerTrench® technology utilized in the FDS6688_NL enables a significant reduction in RDS(on) compared to conventional MOSFETs. This results in lower conduction losses and improved efficiency, particularly in low-voltage, high-current applications. The fast switching speed minimizes switching losses, further contributing to overall efficiency. The low gate charge reduces the drive requirements, simplifying the driver circuitry and improving overall system performance.

The device's avalanche energy rating indicates its ability to withstand transient voltage spikes, enhancing its robustness and reliability. The 100% Rg tested ensures consistent gate resistance, contributing to stable switching performance. The FDS6688_NL is suitable for a wide range of power management applications where efficiency, performance, and reliability are critical.

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