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Same model may have multiple batches, images only for reference.
FDS8670 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDS8670

Part No FDS8670
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 21A 8-SOIC
Datasheet
FDS8670 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 82nC @ 10V
Max Input Capacitance 4040pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 112518-FDS8670
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDS8670 CAD Model

Description

The Fairchild/ON Semiconductor FDS8670 is an N-channel MOSFET with a drain-source breakdown voltage of 30V.

  • Continuous Drain Current: 21A (Ta) @ 25°C
  • Maximum Power Dissipation: 2.5W (Ta)
  • Package: 8-SO
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 82nC @ 10V
  • Maximum Rds On: 3.7 mOhm @ 21A, 10V
  • Status: Obsolete (EOL)
  • Category: Discrete Semiconductor Product
  • Temperature Range: -55°C to 150°C (TJ)

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645+ $0.1802 $116.2290
995+ $0.1744 $173.5280
1,370+ $0.1686 $230.9820
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2,365+ $0.1467 $346.9455
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