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FDS8876

Part No FDS8876
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12.5A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1650pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 12.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 016198-FDS8876
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Computers & Computer Peripherals, Communications & Networking, Power Management
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian FDS8876 CAD Model

Description

The Fairchild/ON Semiconductor 016198-FDS8876 MOSFET is a high-performance N-channel device that is ideal for use in power management applications.

  • Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Rds On (max): 8.2 mOhm @ 12.5A, 10V
  • Gate-Source Voltage (max): ±20V
  • Input Capacitance (max): 1650pF @ 15V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Applications: Computers & computer peripherals, communications & networking, and power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5941 $59.4100
240+ $0.4874 $116.9760
370+ $0.4723 $174.7510
510+ $0.4571 $233.1210
655+ $0.4418 $289.3790
875+ $0.3961 $346.5875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,580 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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