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FDS8882

Name: FDS8882
Brand: Fairchild/ON Semiconductor
SKU: 129978
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	FDS8882
Manufacturer	Fairchild/ON Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 9A 8-SOIC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	20nC @ 10V
Max Input Capacitance	940pF @ 15V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	2.5W (Ta)
Maximum Rds On at Id,Vgs	20 mOhm @ 9A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	103043-FDS8882
Popularity	Medium
Supply and Demand Status	Balance
Quantity per package	2,500
Ultra Librarian 3D Model	Ultra Librarian FDS8882 CAD Model

Description

The Fairchild/ON Semiconductor FDS8882 is a N-Channel MOSFET designed for use in discrete semiconductor products.

Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 9A @ 25°C
Rds On (Max): 20 mOhm @ 9A, 10V
Package: 8-SOIC
Operating Temperature: -55°C to 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
Gate-Source Voltage (Max): ±20V
Packaging: Reel of 2,500

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
360+	$0.1605	$57.7800
880+	$0.1317	$115.8960
1,365+	$0.1271	$173.4915
1,870+	$0.1236	$231.1320
2,430+	$0.1190	$289.1700
3,230+	$0.1074	$346.9020

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 31,500 pieces

MOQ: 360 pcs

Order Increment : 1 pcs

Qty:

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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