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Same model may have multiple batches, images only for reference.
FDT55AN06LA0 Real Image
Same model may have multiple batches, images only for reference.

FDT55AN06LA0

Part No FDT55AN06LA0
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12.1A SOT223-4
Datasheet
FDT55AN06LA0 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 1130pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 8.9W (Tc)
Maximum Rds On at Id,Vgs 46 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 1038462-FDT55AN06LA0
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDT55AN06LA0 CAD Model

Description

The FDT55AN06LA0 is an N-Channel MOSFET transistor designed for use in power management applications.

  • Power Dissipation: 8.9W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 12.1A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Package: SOT-223-4
  • Popularity: Medium
  • Status: Obsolete(EOL)
  • Ideal for: applications that require high voltage and current handling capabilities

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