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Same model may have multiple batches, images only for reference.
FDU6030BL Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDU6030BL

Part No FDU6030BL
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10A I-PAK
Datasheet
FDU6030BL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1143pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1038473-FDU6030BL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FDU6030BL CAD Model

Description

The FDU6030BL is an N-Channel MOSFET type electronic component manufactured by Fairchild/ON Semiconductor.

  • Manufacturer: Fairchild/ON Semiconductor
  • Product Name: FDU6030BL
  • Type: N-Channel MOSFET
  • Case/Package: IPAK (TO-251)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Power Dissipation: 3.8W (Ta) and 50W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 10A (Ta) and 42A (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Input Capacitance: 1143pF @ 15V
  • Maximum Rds On @ Id,Vgs: 16 mOhm @ 10A, 10V
  • Status: Obsolete (EOL)
  • Popularity: Medium

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