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FDU6512A

Part No FDU6512A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 10.7A I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10.7A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 19nC @ 4.5V
Max Input Capacitance 1082pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.8W (Ta), 43W (Tc)
Maximum Rds On at Id,Vgs 21 mOhm @ 10.7A, 4.5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 067112-FDU6512A
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FDU6512A CAD Model

Description

The Fairchild/ON Semiconductor FDU6512A is a MOSFET transistor that comes in a TO-251-3 Short Leads, IPak, TO-251AA package. It has a N-Channel polarity and a drain-source breakdown voltage of 20V.

  • Continuous Drain Current: 10.7A (Ta), 36A (Tc) @ 25°C
  • Maximum Rds On: 21 mOhm @ 10.7A, 4.5V
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 19nC @ 4.5V
  • Maximum Input Capacitance: 1082pF @ 10V
  • Maximum Gate-Source Voltage: ±12V
  • Power Dissipation (max): 3.8W (Ta), 43W (Tc)
  • Status: Obsolete(EOL)
  • Temperature Range - Operating: -55°C to 175°C (TJ)
  • Drive Voltage (max Rds On, Min Rds On): 2.5V, 4.5V

Its supply and demand status is limited.

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