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Same model may have multiple batches, images only for reference.
FDU8876 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FDU8876

Part No FDU8876
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 73A I-PAK
Datasheet
FDU8876 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 47nC @ 10V
Max Input Capacitance 1700pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 040274-FDU8876
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDU8876 CAD Model

Description

The Fairchild/ON Semiconductor FDU8876 is an obsolete (EOL) N-Channel MOSFET transistor.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 70W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 15A (Ta), 73A (Tc) @ 25°C
  • Maximum Rds On: 8.2 mOhm @ 35A, 10V
  • Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1700pF @ 15V
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Status: Obsolete (EOL)

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