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Same model may have multiple batches, images only for reference.
IRF8910TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF8910TRPBF

Part No IRF8910TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 10A 8-SOIC
Datasheet
IRF8910TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10A
Maximum Rds On at Id,Vgs 13.4 mOhm @ 10A, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 960pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 117725-IRF8910TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF8910TRPBF CAD Model

Description

The Infineon Technologies IRF8910TRPBF is a dual N-channel MOSFET transistor that is widely used in various electronic applications.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 10A @ 25°C
  • Maximum Rds on at Id,Vgs: 13.4 mOhm @ 10A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Power Dissipation: 2W
  • Package: 8-SO
  • Gate Type: Logic Level

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1704 $52.6680
95+ $1.0963 $104.1485
145+ $1.0593 $153.5985
205+ $0.9852 $201.9660
265+ $0.9482 $251.2730
330+ $0.9112 $300.6960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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