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Same model may have multiple batches, images only for reference.
FDZ191P Real Image
Same model may have multiple batches, images only for reference.

FDZ191P

Part No FDZ191P
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3A 6WLCSP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 800pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.9W (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-WLCSP
Dimension 6-UFBGA, WLCSP
Win Source Part Number 098818-FDZ191P
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 5k pcs
Ultra Librarian 3D Model Ultra Librarian FDZ191P CAD Model

Description

The Fairchild/ON Semiconductor 098818-FDZ191P is a P-Channel polarity MOSFET technology electronic component. It has a power dissipation of 1.9W (Ta) and a continuous drain current at 25°C of 3A (Ta). The gate-source threshold voltage is 1.5V @ 250μA and the maximum Rds On at Id,Vgs is 85 mOhm @ 1A, 4.5V. The supply and demand status is sufficient with a quantity per package of 5k pcs.

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