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Same model may have multiple batches, images only for reference.
FGA50N100BNTD2 Real Image
Same model may have multiple batches, images only for reference.

FGA50N100BNTD2

Part No FGA50N100BNTD2
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1000V 50A 156W TO3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
IGBT Type NPT and Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 1000V
Maximum Current Collector 50A
Pulsed Collector Current 200A
Collector-emitter saturation voltage(Max) 2.9V @ 15V, 60A
Maximum Power Dissipation 156W
Input Type Standard
Gate Charge 257nC
Turn-on and Turn-off delay time 34ns/243ns
Testing Conditions 600V, 60A, 10 Ohm, 15V
Reverse Recovery Time (trr) 75ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 204170-FGA50N100BNTD2
Popularity Medium
Supply and Demand Status Balance
Quantity per package 450
Ultra Librarian 3D Model Ultra Librarian FGA50N100BNTD2 CAD Model

Description

The FGA50N100BNTD2 is an IGBT from Fairchild/ON Semiconductor. The IGBT is part of the NPT and Trench series and comes in a TO-3P package.

  • Collector-Emitter Breakdown Voltage (Max): 1000V
  • Collector Current (Max): 50A
  • Power Dissipation (Max): 156W
  • Pulsed Collector Current: 200A
  • Reverse Recovery Time: 75ns
  • Gate Charge: 257nC
  • Quantity per Package: 450

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36+ $8.1411 $293.0796
48+ $7.2989 $350.3472
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Availability: 3,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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