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FGAF40N60UFD

Part No FGAF40N60UFD
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description Ultrafast IGBT
Sample
Rohs State rohs
ECAD Module
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1174170-FGAF40N60UFD
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian FGAF40N60UFD CAD Model

Description

The FGAF40N60UFD is a 600V, 40A N-Channel IGBT (Insulated Gate Bipolar Transistor) manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This device is specifically designed for applications requiring fast switching speeds and efficient power handling. It incorporates a co-packaged ultrafast recovery diode, further enhancing its performance in inductive load applications.

Applications

  • Plasma Display Panels (PDPs)
  • Uninterruptible Power Supplies (UPS)
  • Power Factor Correction (PFC) circuits
  • Welding Machines
  • Induction Heating Systems
  • General Purpose Inverters

Features

  • High Voltage Capability: 600V breakdown voltage.
  • High Current Capability: 40A continuous collector current.
  • Ultrafast Switching Speed: Reduces switching losses.
  • Low Saturation Voltage: Minimizes conduction losses.
  • Co-packaged Ultrafast Diode: Enhances performance in inductive loads.
  • TO-3PF Package: Provides good thermal performance and isolation.

Benefits

  • Improved Efficiency: Low losses contribute to high energy efficiency.
  • Reduced EMI: Fast switching minimizes electromagnetic interference.
  • Simplified Design: Integrated diode simplifies circuit design.
  • Enhanced Reliability: Robust design ensures stable performance.
  • Reduced Cooling Requirements: Lower power dissipation reduces heatsink needs.

Additional Details

The FGAF40N60UFD features a maximum collector-emitter voltage (VCE) of 600V, a continuous collector current (IC) of 40A, and a gate-emitter voltage (VGE) of ±20V. The operating junction temperature ranges from -55°C to +150°C. The integrated ultrafast recovery diode provides excellent reverse recovery characteristics, minimizing losses and reducing stress on the IGBT during switching. The TO-3PF package offers good thermal performance and isolation, facilitating efficient heat dissipation and electrical safety. The combination of high voltage, high current, and fast switching capabilities makes this IGBT suitable for demanding power electronic applications where efficiency and reliability are paramount.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1936 $60.6784
45+ $2.6207 $117.9315
69+ $2.5387 $175.1703
95+ $2.4567 $233.3865
122+ $2.3747 $289.7134
163+ $2.1298 $347.1574
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,740 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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