The FJP13007H1J130071 is a high-voltage, high-speed switching NPN power transistor from Fairchild Semiconductor (now ON Semiconductor). It is designed for high-power, high-voltage, and high-speed switching applications. This transistor offers robust performance and reliability in demanding environments.

Applications:

• Switch-mode power supplies (SMPS)
• Electronic ballasts for lighting
• Power inverters
• Motor control circuits
• High-voltage switching regulators

Features:

• High collector-emitter breakdown voltage (VCEO)
• High collector current (IC) capability
• Fast switching speed
• Low saturation voltage
• High power dissipation capability
• RoHS compliant

Benefits:

• Improved efficiency in power supplies due to fast switching.
• Increased reliability in high-voltage applications due to high breakdown voltage.
• Reduced heat generation because of low saturation voltage.
• Compact design possibilities due to high power dissipation capability.
• Environmentally friendly due to RoHS compliance.

Technical Specifications:

The FJP13007H1J130071 features a collector-emitter voltage (VCEO) of 400V, a collector-base voltage (VCBO) of 700V, and an emitter-base voltage (VEBO) of 9V. It has a continuous collector current (IC) of 8A and a peak collector current (ICM) of 16A. The transistor boasts a total power dissipation (PD) of 80W at 25°C case temperature. Its typical fall time is around 0.25us and rise time is around 0.4us. The operating junction temperature ranges from -65°C to +150°C. It is typically available in a TO-220 package, facilitating efficient heat dissipation. The DC current gain (hFE) typically ranges from 8 to 24 at a collector current of 1A.