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Same model may have multiple batches, images only for reference.
FQA16N50_F109 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQA16N50_F109

Part No FQA16N50_F109
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 16A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 3000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 320 mOhm @ 8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PN
Dimension TO-3P-3, SC-65-3
Win Source Part Number 127779-FQA16N50_F109
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQA16N50_F109 CAD Model

Description

The Fairchild/ON Semiconductor FQA16N50_F109 is an N-channel MOSFET used in power management, industrial, and automotive applications.

  • Maximum Power Dissipation: 200W
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 16A @ 25°C
  • Recommendation: Not recommended for new designs

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